Транзистор: N-MOSFET; полевой; 1200В; 6А; 150Вт; TO247 Технические параметры
- Manufacturer: STM
- Technology: MDmesh™
- Drain current: 6A
- Polarisation: unipolar
- Kind of package: tube
- Gate-source voltage: ±30V
- Drain-source voltage: 1200V
- Features of semiconductor devices: ESD protected gate
- Mounting: THT
- Case: TO247
- Type of transistor: N-MOSFET
- On-State Resistance: 2400mΩ
- Power dissipation: 150W