Транзистор: МОП n-канальный; полевой; 800В; 5,2А; 125Вт; TO220 Технические параметры
- Continuous Drain Current (Id): 5.2A
- Drain-source voltage: 800V
- Drain-Source Voltage (Vds): 800V
- Fall Time: 20ns
- Gate-Source Voltage: 30V
- Height Units: 3
- Housing: TO220
- Manufacturer: STM
- Mount: THT
- Mounting Type: Through Hole
- ON Resistance (Rds(on)): 1.5Ω
- Operating Temperature Max.: 150°C
- Operating Temperature Min.: -55°C
- Package Type: TO-220AB
- Packaging: Tube
- Phases: Single
- Polarity: полевой
- Power Dissipation (Pd): 125W
- Rise Time: 12ns
- Transistor Polarity: N-Channel
- Transistor type: МОП n-канальный
- Turn-OFF Delay Time: 45ns
- Turn-ON Delay Time: 20ns
- Мощность: 125W
- Сопротивление в открытом состоянии: 1.8Ω
- Ток стока: 5.2A