THT N channel transistors Технические параметры
- Continuous Drain Current (Id): 12A
- Drain-Source Voltage (Vds): 100V
- Fall Time: 80ns
- Gate-Source Voltage: 10V
- Height Units: 3
- Manufacturer: ON SEMICONDUCTOR
- Mounting Type: Through Hole
- ON Resistance (Rds(on)): 200mΩ
- Operating Temperature Max.: 150°C
- Operating Temperature Min.: -55°C
- Package Type: TO-220
- Packaging: Tube
- Phases: Single
- Power Dissipation (Pd): 60W
- Reflow Temperature Max.: 300°C
- Rise Time: 70ns
- Transistor Polarity: N-Channel
- Turn-OFF Delay Time: 100ns
- Turn-ON Delay Time: 15ns
