Транзистор: N-JFET; полевой; 25В; 225мВт; SOT23; 10мА Технические параметры
- Breakdown Voltage: -25V
- Case: SOT23
- Drain-source voltage: 25V
- Drain-Source Voltage (Vds): 25V
- Gate current: 10mA
- Gate-Source Cutoff Voltage Max. (Vgs(off)): -6.5V
- Gate-source voltage: 25V
- Height Units: 3
- Kind of package: tape
- Manufacturer: ON SEMICONDUCTOR
- Mounting: SMD
- Mounting Type: SMD
- MSL: Level-1
- Operating Temperature Max.: 150°C
- Operating Temperature Min.: -55°C
- Package Type: SOT-23
- Packaging: Tape & Reel
- Phases: Single
- Polarisation: unipolar
- Power dissipation: 225mW
- Power Dissipation (Pd): 225mW
- Reflow Temperature Max.: 260°C
- Ripple & Noise (%): -999
- Transistor Polarity: N-Channel
- Type of transistor: N-JFET