Junction FET, -3V, TO-92, N-Channel Технические параметры
- Breakdown Voltage: -35V
- Gate-Source Cutoff Voltage Max. (Vgs(off)): -3V
- Height Units: 3
- Manufacturer: ON SEMICONDUCTOR
- Mounting Type: Through Hole
- Operating Temperature Max.: 150°C
- Operating Temperature Min.: -55°C
- Package Type: TO-92
- Packaging: Bulk
- Phases: Single
- Power Dissipation (Pd): 625mW
- Ripple & Noise (%): -999
- Transistor Polarity: N-Channel