Транзистор: IGBT; 650В; 50А; 111Вт; TO247-3 Технические параметры
- Case: TO247-3
- Collector current: 50A
- Collector-emitter voltage: 650V
- Features of semiconductor devices: integrated anti-parallel diode
- Gate - emitter voltage: ±20V
- Gate charge: 160нКл
- Kind of package: tube
- Manufacturer: WEEN SEMICONDUCTORS
- Mounting: THT
- Power dissipation: 111W
- Pulsed collector current: 200A
- Turn-off time: 265ns
- Turn-on time: 123ns
- Type of transistor: IGBT