Транзистор: N-MOSFET; STripFET™; полевой; 20В; 1,4А; Idm: 9,2А Технические параметры
- Case: SOT23
- Channel kind: enhanced
- Drain current: 1.4A
- Drain-source voltage: 20V
- Gate charge: 4.6нКл
- Gate-source voltage: ±8V
- Kind of package: tape
- Manufacturer: STM
- Mounting: SMD
- On-State Resistance: 40mΩ
- Polarisation: unipolar
- Power dissipation: 0.35W
- Pulsed drain current: 9.2A
- Technology: STripFET™
- Type of transistor: N-MOSFET