Транзистор: N-MOSFET; полевой; 50В; 200мА; Idm: 0,8А; 150мВт Технические параметры
- Case: SOT323F
- Channel kind: enhanced
- Drain current: 200mA
- Drain-source voltage: 50V
- Features of semiconductor devices: ESD protected gate
- Gate-source voltage: ±8V
- Kind of package: tape
- Manufacturer: Rohm
- Mounting: SMD
- On-State Resistance: 3.8Ω
- Polarisation: unipolar
- Power dissipation: 150mW
- Pulsed drain current: 0.8A
- Type of transistor: N-MOSFET