Транзистор: N-MOSFET; полевой; 20В; 100мА; Idm: 0,4А; 150мВт Технические параметры
- Case: SOT323F
- Channel kind: enhanced
- Drain current: 100mA
- Drain-source voltage: 20V
- Features of semiconductor devices: ESD protected gate
- Gate-source voltage: ±8V
- Kind of package: tape
- Manufacturer: Rohm
- Mounting: SMD
- On-State Resistance: 5.6Ω
- Polarisation: unipolar
- Power dissipation: 150mW
- Pulsed drain current: 0.4A
- Type of transistor: N-MOSFET