Транзистор: N-MOSFET + Schottky; полевой; 30В; 2А; Idm: 8А; 900мВт Технические параметры
- Case: SOT25T
- Channel kind: enhanced
- Drain current: 2A
- Drain-source voltage: 30V
- Features of semiconductor devices: ESD protected gate
- Gate charge: 3.9нКл
- Gate-source voltage: ±12V
- Kind of package: tape
- Manufacturer: Rohm
- Mounting: SMD
- On-State Resistance: 100mΩ
- Polarisation: unipolar
- Power dissipation: 900mW
- Pulsed drain current: 8A
- Type of transistor: N-MOSFET + Schottky