Транзистор: N-MOSFET; Trench; полевой; 20В; 1А; Idm: 6А; SOT883B Технические параметры
- Case: SOT883B
- Channel kind: enhanced
- Drain current: 1A
- Drain-source voltage: 20V
- Gate charge: 1.6нКл
- Gate-source voltage: ±8V
- Kind of package: tape
- Manufacturer: NEXPERIA
- Mounting: SMD
- On-State Resistance: 280mΩ
- Polarisation: unipolar
- Pulsed drain current: 6A
- Technology: Trench
- Type of transistor: N-MOSFET