Транзистор: N-MOSFET; Trench; полевой; 80В; 700мА; Idm: 4,4А Технические параметры
- Case: SOT1215
- Channel kind: enhanced
- Drain current: 700mA
- Drain-source voltage: 80V
- Features of semiconductor devices: ESD protected gate
- Gate charge: 4.5нКл
- Gate-source voltage: ±20V
- Kind of package: tape
- Manufacturer: NEXPERIA
- Mounting: SMD
- On-State Resistance: 887mΩ
- Polarisation: unipolar
- Pulsed drain current: 4.4A
- Technology: Trench
- Type of transistor: N-MOSFET