Транзистор: N-MOSFET; Trench; полевой; 40В; 2,1А; Idm: 12А Технические параметры
- Case: TO236AB
- Channel kind: enhanced
- Drain current: 2.1A
- Drain-source voltage: 40V
- Features of semiconductor devices: ESD protected gate
- Gate charge: 5нКл
- Gate-source voltage: ±20V
- Kind of package: tape
- Manufacturer: NEXPERIA
- Mounting: SMD
- On-State Resistance: 143mΩ
- Polarisation: unipolar
- Pulsed drain current: 12A
- Technology: Trench
- Type of transistor: N-MOSFET