Транзистор: N-MOSFET; Trench; полевой; 30В; 2,5А; Idm: 5,5А Технические параметры
- Case: TO236AB
- Channel kind: enhanced
- Drain current: 2.5A
- Drain-source voltage: 30V
- Features of semiconductor devices: ESD protected gate
- Gate charge: 10нКл
- Gate-source voltage: ±20V
- Kind of package: tape
- Manufacturer: NEXPERIA
- Mounting: SMD
- On-State Resistance: 69mΩ
- Polarisation: unipolar
- Pulsed drain current: 5.5A
- Technology: Trench
- Type of transistor: N-MOSFET