Транзистор: N-MOSFET; Trench; полевой; 30В; 2,6А; Idm: 16А Технические параметры
- Case: TO236AB
- Channel kind: enhanced
- Drain current: 2.6A
- Drain-source voltage: 30V
- Gate charge: 6.3нКл
- Gate-source voltage: ±20V
- Kind of package: tape
- Manufacturer: NEXPERIA
- Mounting: SMD
- On-State Resistance: 66mΩ
- Polarisation: unipolar
- Pulsed drain current: 16A
- Technology: Trench
- Type of transistor: N-MOSFET