Транзистор: N-MOSFET; Trench; полевой; 30В; 2,7А; Idm: 18А Технические параметры
- Case: TO236AB
- Channel kind: enhanced
- Drain current: 2.7A
- Drain-source voltage: 30V
- Features of semiconductor devices: ESD protected gate
- Gate charge: 9нКл
- Gate-source voltage: ±20V
- Kind of package: tape
- Manufacturer: NEXPERIA
- Mounting: SMD
- On-State Resistance: 57mΩ
- Polarisation: unipolar
- Pulsed drain current: 18A
- Technology: Trench
- Type of transistor: N-MOSFET