Транзистор: N-MOSFET; Trench; полевой; 20В; 2,9А; Idm: 19А Технические параметры
- Case: TO236AB
- Channel kind: enhanced
- Drain current: 2.9A
- Drain-source voltage: 20V
- Features of semiconductor devices: ESD protected gate
- Gate charge: 10нКл
- Gate-source voltage: ±8V
- Kind of package: tape
- Manufacturer: NEXPERIA
- Mounting: SMD
- On-State Resistance: 48mΩ
- Polarisation: unipolar
- Pulsed drain current: 19A
- Technology: Trench
- Type of transistor: N-MOSFET