Транзистор: N-MOSFET; Trench; полевой; 100В; 1А; Idm: 6А Технические параметры
- Case: SOT223
- Channel kind: enhanced
- Drain current: 1A
- Drain-source voltage: 100V
- Features of semiconductor devices: ESD protected gate
- Gate charge: 6.8нКл
- Gate-source voltage: ±20V
- Kind of package: tape
- Manufacturer: NEXPERIA
- Mounting: SMD
- On-State Resistance: 847mΩ
- Polarisation: unipolar
- Pulsed drain current: 6A
- Technology: Trench
- Type of transistor: N-MOSFET