Транзистор: N-MOSFET; Trench; полевой; 80В; 1,8А; Idm: 11,2А Технические параметры
- Case: SOT1220
- Channel kind: enhanced
- Drain current: 1.8A
- Drain-source voltage: 80V
- Features of semiconductor devices: ESD protected gate
- Gate charge: 14.9нКл
- Gate-source voltage: ±20V
- Kind of package: tape
- Manufacturer: NEXPERIA
- Mounting: SMD
- On-State Resistance: 202mΩ
- Polarisation: unipolar
- Pulsed drain current: 11.2A
- Technology: Trench
- Type of transistor: N-MOSFET