Транзистор: N-MOSFET; Trench; полевой; 40В; 5,1А; Idm: 33А Технические параметры
- Case: SOT1220
- Channel kind: enhanced
- Drain current: 5.1A
- Drain-source voltage: 40V
- Features of semiconductor devices: ESD protected gate
- Gate charge: 28нКл
- Gate-source voltage: ±8V
- Kind of package: tape
- Manufacturer: NEXPERIA
- Mounting: SMD
- On-State Resistance: 29mΩ
- Polarisation: unipolar
- Pulsed drain current: 33A
- Technology: Trench
- Type of transistor: N-MOSFET