Транзистор: N-MOSFET; Trench; полевой; 30В; 5,7А; Idm: 34А Технические параметры
- Case: SOT1220
- Channel kind: enhanced
- Drain current: 5.7A
- Drain-source voltage: 30V
- Features of semiconductor devices: ESD protected gate
- Gate charge: 20.6нКл
- Gate-source voltage: ±20V
- Kind of package: tape
- Manufacturer: NEXPERIA
- Mounting: SMD
- On-State Resistance: 20.5mΩ
- Polarisation: unipolar
- Pulsed drain current: 34A
- Technology: Trench
- Type of transistor: N-MOSFET