Транзистор: N-MOSFET; Trench; полевой; 60В; 3А; Idm: 19А Технические параметры
- Case: TSOP6
- Channel kind: enhanced
- Drain current: 3A
- Drain-source voltage: 60V
- Gate charge: 14нКл
- Gate-source voltage: ±20V
- Kind of package: tape
- Manufacturer: NEXPERIA
- Mounting: SMD
- On-State Resistance: 76mΩ
- Polarisation: unipolar
- Pulsed drain current: 19A
- Technology: Trench
- Type of transistor: N-MOSFET