Транзистор: N-MOSFET; Trench; полевой; 30В; 370мА; Idm: 2,3А Технические параметры
- Case: SOT1216
- Channel kind: enhanced
- Drain current: 370mA
- Drain-source voltage: 30V
- Features of semiconductor devices: ESD protected gate
- Gate charge: 1.05нКл
- Gate-source voltage: ±8V
- Kind of package: tape
- Manufacturer: NEXPERIA
- Mounting: SMD
- On-State Resistance: 1.17Ω
- Polarisation: unipolar
- Pulsed drain current: 2.3A
- Technology: Trench
- Type of transistor: N-MOSFET