Транзистор: N-MOSFET; Trench; полевой; 12В; 3А; Idm: 19А; WLCSP4 Технические параметры
- Case: WLCSP4
- Channel kind: enhanced
- Drain current: 3A
- Drain-source voltage: 12V
- Features of semiconductor devices: ESD protected gate
- Gate charge: 9нКл
- Gate-source voltage: ±8V
- Kind of package: tape
- Manufacturer: NEXPERIA
- Mounting: SMD
- On-State Resistance: 57mΩ
- Polarisation: unipolar
- Pulsed drain current: 19A
- Technology: Trench
- Type of transistor: N-MOSFET