Транзистор: N-MOSFET; полевой; 55В; 75А; Idm: 439А; 203Вт; D2PAK Технические параметры
- Application: automotive industry
- Case: D2PAK
- Channel kind: enhanced
- Drain current: 75A
- Drain-source voltage: 55V
- Features of semiconductor devices: logic level
- Gate charge: 45нКл
- Gate-source voltage: ±15V
- Kind of package: tape
- Manufacturer: NEXPERIA
- Mounting: SMD
- On-State Resistance: 16.8mΩ
- Polarisation: unipolar
- Power dissipation: 203W
- Pulsed drain current: 439A
- Type of transistor: N-MOSFET