Транзистор: N-MOSFET; полевой; 55В; 74А; Idm: 420А; 158Вт; D2PAK Технические параметры
- Application: automotive industry
- Case: D2PAK
- Channel kind: enhanced
- Drain current: 74A
- Drain-source voltage: 55V
- Features of semiconductor devices: logic level
- Gate charge: 43нКл
- Gate-source voltage: ±15V
- Kind of package: tape
- Manufacturer: NEXPERIA
- Mounting: SMD
- On-State Resistance: 14.3mΩ
- Polarisation: unipolar
- Power dissipation: 158W
- Pulsed drain current: 420A
- Type of transistor: N-MOSFET