Транзистор: N-MOSFET; полевой; 60В; 2А; Idm: 12,6А; 8,36Вт; SOT23 Технические параметры
- Case: SOT23
- Channel kind: enhanced
- Drain current: 2A
- Drain-source voltage: 60V
- Features of semiconductor devices: logic level
- Gate charge: 19нКл
- Gate-source voltage: ±20V
- Kind of package: tape
- Manufacturer: NEXPERIA
- Mounting: SMD
- On-State Resistance: 120mΩ
- Polarisation: unipolar
- Power dissipation: 8.36W
- Pulsed drain current: 12.6A
- Type of transistor: N-MOSFET