Транзистор: N-MOSFET Технические параметры
- Case: SOT323
- Channel kind: enhanced
- Drain current: 135mA
- Drain-source voltage: 60V
- Gate charge: 700пКл
- Gate-source voltage: ±20V
- Kind of package: tape
- Manufacturer: NEXPERIA
- Mounting: SMD
- On-State Resistance: 7.2Ω
- Polarisation: unipolar
- Pulsed drain current: 855A
- Type of transistor: N-MOSFET