Транзистор: N-MOSFET; полевой; 60В; 12А; Idm: 77А; 9Вт; DPAK Технические параметры
- Case: DPAK
- Channel kind: enhanced
- Drain current: 12A
- Drain-source voltage: 60V
- Gate charge: 7нКл
- Gate-source voltage: ±16V
- Kind of package: tape
- Manufacturer: ON SEMICONDUCTOR
- Mounting: SMD
- On-State Resistance: 27.4mΩ
- Polarisation: unipolar
- Power dissipation: 9W
- Pulsed drain current: 77A
- Type of transistor: N-MOSFET