Транзистор: IGBT; 600В; 10А; 65Вт; D2PAK Технические параметры
- Case: D2PAK
- Collector current: 10A
- Collector-emitter voltage: 600V
- Features of semiconductor devices: integrated anti-parallel diode
- Gate - emitter voltage: ±20V
- Gate charge: 19.2нКл
- Kind of package: tape
- Manufacturer: STM
- Mounting: SMD
- Power dissipation: 65W
- Pulsed collector current: 20A
- Type of transistor: IGBT