Транзистор: N-MOSFET; полевой; 60В; 0,15А; Idm: 3А; 0,33Вт; SOT23 Технические параметры
- Case: SOT23
- Channel kind: enhanced
- Drain current: 0.15A
- Drain-source voltage: 60V
- Gate-source voltage: ±20V
- Kind of package: tape
- Manufacturer: Diodes/Zetex
- Mounting: SMD
- On-State Resistance: 5Ω
- Polarisation: unipolar
- Power dissipation: 0.33W
- Pulsed drain current: 3A
- Type of transistor: N-MOSFET