Транзистор: N-MOSFET; полевой; 75В; 174А; Idm: 984А; 375Вт; D2PAK Технические параметры
- Case: D2PAK
- Channel kind: enhanced
- Drain current: 174A
- Drain-source voltage: 75V
- Gate charge: 407нКл
- Gate-source voltage: ±20V
- Kind of package: reel
- Manufacturer: Infineon
- Mounting: SMD
- On-State Resistance: 2.6mΩ
- Polarisation: unipolar
- Power dissipation: 375W
- Pulsed drain current: 984A
- Technology: HEXFET®
- Type of transistor: N-MOSFET