Транзистор: N-MOSFET; EETMOS3; полевой; 55В; 90А; Idm: 360А; 128Вт Технические параметры
- Case: FG (TO263AB)
- Channel kind: enhanced
- Drain current: 90A
- Drain-source voltage: 55V
- Gate charge: 106нКл
- Gate-source voltage: ±20V
- Kind of package: tape
- Manufacturer: SHINDENGEN
- Mounting: SMD
- On-State Resistance: 3.8mΩ
- Polarisation: unipolar
- Power dissipation: 128W
- Pulsed drain current: 360A
- Technology: EETMOS3
- Type of transistor: N-MOSFET