Транзистор: N-MOSFET; EETMOS3; полевой; 100В; 8А; Idm: 24А; 24Вт Технические параметры
- Case: FE (TO252AB similar)
- Channel kind: enhanced
- Drain current: 8A
- Drain-source voltage: 100V
- Gate charge: 16.5нКл
- Gate-source voltage: ±20V
- Kind of package: tape
- Manufacturer: SHINDENGEN
- Mounting: SMD
- On-State Resistance: 99mΩ
- Polarisation: unipolar
- Power dissipation: 24W
- Pulsed drain current: 24A
- Technology: EETMOS3
- Type of transistor: N-MOSFET