Технические параметры
- Application: automotive industry
- Case: FE (TO252AB similar)
- Channel kind: enhanced
- Drain current: 6A
- Drain-source voltage: 250V
- Gate charge: 10нКл
- Gate-source voltage: ±30V
- Kind of package: tape
- Manufacturer: SHINDENGEN
- Mounting: SMD
- On-State Resistance: 700mΩ
- Polarisation: unipolar
- Power dissipation: 27W
- Pulsed drain current: 24A
- Type of transistor: N-MOSFET