Транзистор: N-MOSFET; EETMOS3; полевой; 40В; 56А; Idm: 168А; 99Вт; LA Технические параметры
- Case: LA
- Channel kind: enhanced
- Drain current: 56A
- Drain-source voltage: 40V
- Gate charge: 38нКл
- Gate-source voltage: ±20V
- Kind of package: tape
- Manufacturer: SHINDENGEN
- Mounting: SMD
- On-State Resistance: 5.7mΩ
- Polarisation: unipolar
- Power dissipation: 99W
- Pulsed drain current: 168A
- Technology: EETMOS3
- Type of transistor: N-MOSFET