Технические параметры
- Case: LF (MO235B similar)
- Channel kind: enhanced
- Drain current: 50A
- Drain-source voltage: 100V
- Gate charge: 102нКл
- Gate-source voltage: ±20V
- Kind of package: tape
- Manufacturer: SHINDENGEN
- Mounting: SMD
- On-State Resistance: 11.3mΩ
- Polarisation: unipolar
- Power dissipation: 217W
- Pulsed drain current: 200A
- Technology: EETMOS3
- Type of transistor: N-MOSFET