Транзистор: N-MOSFET; EETMOS2; полевой; 40В; 50А; Idm: 200А; 62,5Вт Технические параметры
- Case: FB (TO252AA)
- Channel kind: enhanced
- Drain current: 50A
- Drain-source voltage: 40V
- Gate charge: 52нКл
- Gate-source voltage: ±20V
- Kind of package: tape
- Manufacturer: SHINDENGEN
- Mounting: SMD
- On-State Resistance: 4.5mΩ
- Polarisation: unipolar
- Power dissipation: 62.5W
- Pulsed drain current: 200A
- Technology: EETMOS2
- Type of transistor: N-MOSFET