Транзистор: N-MOSFET; EETMOS3; полевой; 75В; 46А; Idm: 138А; 168Вт Технические параметры
- Case: LF (MO235B similar)
- Channel kind: enhanced
- Drain current: 46A
- Drain-source voltage: 75V
- Gate charge: 61нКл
- Gate-source voltage: ±20V
- Kind of package: tape
- Manufacturer: SHINDENGEN
- Mounting: SMD
- On-State Resistance: 10.3mΩ
- Polarisation: unipolar
- Power dissipation: 168W
- Pulsed drain current: 138A
- Technology: EETMOS3
- Type of transistor: N-MOSFET