Транзистор: N-MOSFET; EETMOS3; полевой; 60В; 40А; Idm: 120А; 44Вт Технические параметры
- Case: FB (TO252AA)
- Channel kind: enhanced
- Drain current: 40A
- Drain-source voltage: 60V
- Gate charge: 43нКл
- Gate-source voltage: ±20V
- Kind of package: tape
- Manufacturer: SHINDENGEN
- Mounting: SMD
- On-State Resistance: 12mΩ
- Polarisation: unipolar
- Power dissipation: 44W
- Pulsed drain current: 120A
- Technology: EETMOS3
- Type of transistor: N-MOSFET