Транзистор: N-MOSFET; EETMOS3; полевой; 100В; 40А; Idm: 40А; 62,5Вт Технические параметры
- Case: FB (TO252AA)
- Channel kind: enhanced
- Drain current: 40A
- Drain-source voltage: 100V
- Gate charge: 56нКл
- Gate-source voltage: ±20V
- Kind of package: tape
- Manufacturer: SHINDENGEN
- Mounting: SMD
- On-State Resistance: 16.8mΩ
- Polarisation: unipolar
- Power dissipation: 62.5W
- Pulsed drain current: 40A
- Technology: EETMOS3
- Type of transistor: N-MOSFET