Транзистор: N-MOSFET; Hi-PotMOS2; полевой; 280В; 3А; Idm: 12А; 35Вт Технические параметры
- Case: FB (TO252AA)
- Channel kind: enhanced
- Drain current: 3A
- Drain-source voltage: 280V
- Gate charge: 2.1нКл
- Gate-source voltage: ±30V
- Kind of package: tape
- Manufacturer: SHINDENGEN
- Mounting: SMD
- On-State Resistance: 2Ω
- Polarisation: unipolar
- Power dissipation: 35W
- Pulsed drain current: 12A
- Technology: Hi-PotMOS2
- Type of transistor: N-MOSFET