Транзистор: N-MOSFET; EETMOS4; полевой; 60В; 38А; Idm: 114А; 123Вт Технические параметры
- Case: LF (MO235B similar)
- Channel kind: enhanced
- Drain current: 38A
- Drain-source voltage: 60V
- Gate charge: 49нКл
- Gate-source voltage: ±20V
- Kind of package: tape
- Manufacturer: SHINDENGEN
- Mounting: SMD
- On-State Resistance: 9.9mΩ
- Polarisation: unipolar
- Power dissipation: 123W
- Pulsed drain current: 114A
- Technology: EETMOS4
- Type of transistor: N-MOSFET