Транзистор: N-MOSFET; Hi-PotMOS2; полевой; 280В; 36А; Idm: 144А Технические параметры
- Case: FH (TO263AB)
- Channel kind: enhanced
- Drain current: 36A
- Drain-source voltage: 280V
- Gate charge: 35нКл
- Gate-source voltage: ±30V
- Kind of package: tape
- Manufacturer: SHINDENGEN
- Mounting: SMD
- On-State Resistance: 120mΩ
- Polarisation: unipolar
- Power dissipation: 175W
- Pulsed drain current: 144A
- Technology: Hi-PotMOS2
- Type of transistor: N-MOSFET