Транзистор: N-MOSFET; EETMOS3; полевой; 150В; 32А; Idm: 96А; 100Вт Технические параметры
- Case: FG (TO263AB)
- Channel kind: enhanced
- Drain current: 32A
- Drain-source voltage: 150V
- Gate charge: 72нКл
- Gate-source voltage: ±20V
- Kind of package: tape
- Manufacturer: SHINDENGEN
- Mounting: SMD
- On-State Resistance: 40mΩ
- Polarisation: unipolar
- Power dissipation: 100W
- Pulsed drain current: 96A
- Technology: EETMOS3
- Type of transistor: N-MOSFET