Транзистор: N-MOSFET; EETMOS3; полевой; 100В; 30А; Idm: 90А; 142Вт Технические параметры
- Case: LA
- Channel kind: enhanced
- Drain current: 30A
- Drain-source voltage: 100V
- Gate charge: 61нКл
- Gate-source voltage: ±20V
- Kind of package: tape
- Manufacturer: SHINDENGEN
- Mounting: SMD
- On-State Resistance: 21mΩ
- Polarisation: unipolar
- Power dissipation: 142W
- Pulsed drain current: 90A
- Technology: EETMOS3
- Type of transistor: N-MOSFET