Транзистор: N-MOSFET; EETMOS3; полевой; 75В; 30А; Idm: 90А; 44Вт Технические параметры
- Case: FE (TO252AB similar)
- Channel kind: enhanced
- Drain current: 30A
- Drain-source voltage: 75V
- Gate charge: 45нКл
- Gate-source voltage: ±20V
- Kind of package: tape
- Manufacturer: SHINDENGEN
- Mounting: SMD
- On-State Resistance: 17.8mΩ
- Polarisation: unipolar
- Power dissipation: 44W
- Pulsed drain current: 90A
- Technology: EETMOS3
- Type of transistor: N-MOSFET