Технические параметры
- Case: FB (TO252AA)
- Channel kind: enhanced
- Drain current: 24A
- Drain-source voltage: 40V
- Gate charge: 16.5нКл
- Gate-source voltage: ±20V
- Kind of package: tape
- Manufacturer: SHINDENGEN
- Mounting: SMD
- On-State Resistance: 18.5mΩ
- Polarisation: unipolar
- Power dissipation: 20W
- Pulsed drain current: 72A
- Technology: EETMOS3
- Type of transistor: N-MOSFET