Транзистор: N-MOSFET; Hi-PotMOS2; полевой; 500В; 20А; Idm: 80А Технические параметры
- Case: FH (TO263AB)
- Channel kind: enhanced
- Drain current: 20A
- Drain-source voltage: 500V
- Gate charge: 40нКл
- Gate-source voltage: ±30V
- Kind of package: tape
- Manufacturer: SHINDENGEN
- Mounting: SMD
- On-State Resistance: 360mΩ
- Polarisation: unipolar
- Power dissipation: 175W
- Pulsed drain current: 80A
- Technology: Hi-PotMOS2
- Type of transistor: N-MOSFET