Транзистор: N-MOSFET; полевой; 900В; 1А; Idm: 4А; 36Вт Технические параметры
- Application: automotive industry
- Case: FE (TO252AB similar)
- Channel kind: enhanced
- Drain current: 1A
- Drain-source voltage: 900V
- Gate charge: 10.8нКл
- Gate-source voltage: ±30V
- Kind of package: tape
- Manufacturer: SHINDENGEN
- Mounting: SMD
- On-State Resistance: 14Ω
- Polarisation: unipolar
- Power dissipation: 36W
- Pulsed drain current: 4A
- Type of transistor: N-MOSFET